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surface photovoltage表面光电压

PL-SPV/IPCE1000 Stable surface photovoltage spectrometer

PL-SPV/IPCE1000 稳态表面光电压谱仪

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Surface photovoltage technique can be used to determine the conductivity type of semiconductors, measure the diffusion distance of minority carriers, characterize surface state parameters, and study the behavior of photogenerated charges. It can also prov
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Surface Photovoltage (SPV) technique is a non-contact measurement method that quantifies the voltage change on the semiconductor surface after illumination, demonstrating high sensitivity.

In recent years, SPV technique has been widely applied in research areas such as photocatalytic hydrogen production, solar cells, photodegradation, photoelectric sensitivity, and photochemical water oxidation. Researchers combine SPV technique with materials to interpret the dynamic behavior of photogenerated charges in corresponding reaction processes and gain deep insights into the separation, transportation, and recombination processes of photogenerated charges in semiconductors.

SPV technique can be utilized to determine the conductivity type of semiconductors, measure the diffusion distance of minority carriers, characterize surface state parameters, and study the behavior of photogenerated charges. It also provides information on charge transition properties, defect states, heterojunction charge transfer, quantum size effects, quantum confinement characteristics, photogenerated charge separation, transportation, and recombination in semiconductor materials.

Schematic Diagram of Steady-state Surface Photovoltage Spectrometer

Schematic Diagram of Steady-state Surface Photovoltage Spectrometer

Key Features

● An effective and non-destructive means to study the behavior of photogenerated charges on samples with high sensitivity;

By measuring the surface photovoltage of materials using a high-precision and high-sensitivity lock-in amplifier, the measurement process is non-destructive to the sample, with a sensitivity reaching up to 108 e-/cm2, which is superior to the sensitivity of ordinary spectroscopy by 3~5 orders of magnitude;

● Versatile functions, further expanded with different measurement cells;

By measuring the surface photovoltage of materials, it is possible to identify the conductivity type of semiconductor materials, measure the bandgap width of semiconductors, assess the impact of material modification on surface state properties and positions, differentiate between band-to-band transitions and sub-bandgap transitions, distinguish heterojunction structure types, and measure the diffusion distance and direction of carriers;

When paired with a photoelectrochemical cell, it can measure the photoconversion efficiency of materials in liquid-solid reaction processes;

When paired with a gas-solid reaction cell, it can measure the interfacial electric field at the gas-solid interface under different gas atmospheres and measure photoelectric sensitivity elements.

● A strong technical team of experts provides reliable instrument training, spectrum analysis, and data analysis services;

Our company has long-term in-depth collaboration with Professor Dejun Wang and Professor Tengfeng Xie from Jilin University, offering technical services including instrument usage, spectrum analysis, and data interpretation.

Applications

▲ Particularly Suitable ● Moderately Suitable ○ Applicable

 

▲ Measure the surface photovoltage of photoelectric functional materials

 

▲ Identify the conductivity type of semiconductor materials

 

▲ Measure the bandgap width of semiconductors

 

▲ Assess the impact of material modification on surface state properties and positions

 

▲ Differentiate between band-to-band transitions and sub-bandgap transitions

 

▲ Distinguish heterojunction structure types

 

▲ Measure the diffusion distance and direction of carriers

 

● Calculate the photoconversion efficiency of photoelectric functional materials

 

● Measure the surface photovoltage current during the photochemical reaction process of photoelectric functional materials

 

● Measure the interfacial electric field at the gas-solid interface under different gas atmospheres

● Measure photoelectric sensitivity elements

 

Technical Specifications

Photovoltage Measurement Measurable Photovoltage > 100 nV Wavelength Range: 300~1000 nm Spectral Resolution: 2 nm
Photocurrent Measurement Measurable Photocurrent > 100 pA Wavelength Range: 300~1000 nm Spectral Resolution: 2 nm
Photovoltaic Phase Spectrum Phase Detection Range: ±180° Wavelength Range: 300~1000 nm  
Internal Quantum Efficiency (IPCE)   Wavelength Range: 300~1000 nm  

Representative Publications



Testing Services

  • Measure the surface photovoltage of photoelectric functional materials
  • Identify the conductivity type of semiconductor materials
  • Measure the bandgap width of semiconductors
  • Assess the impact of material modification on surface state properties and positions
  • Differentiate between band-to-band transitions and sub-bandgap transitions
  • Distinguish heterojunction structure types
  • Measure the diffusion distance and direction of carriers
  • Calculate the photoconversion efficiency of photoelectric functional materials
  • Measure the surface photovoltage current during the photochemical reaction process of photoelectric functional materials
  • Measure the interfacial electric field at the gas-solid interface under different gas atmospheres
  • Measure photoelectric sensitivity elements
  • [1]Gao Jianfeng, Ge Lei. In-situ synthesis of novel ternary CdS/PdAg/g-C3N4 hybrid photocatalyst with significantly enhanced hydrogen production activity and catalytic mechanism exploration. Applied Catalysis B: Environmental, 2021, 281: 119509. 
  • [2]Y. Li, Q. Wu, Y. Chen, R. Zhang, C. Li, K. Zhang, M. Li, Y. Lin, D. Wang, X. Zou, T. Xie, Interface engineering Z-scheme Ti-Fe2O3/In2O3 photoanode for highly efficient photoelectrochemical water splitting, Appl. Catal. B Environ. 290 (2021) 120058
  • [3]LiWang,DeliChen,ShuqiMiao,FangChen,ChangfaGuo,PengchengYe,JiqiangNing,YijunZhong,YongHua,Nitric acid-assisted growth of InVO4 nanobelts on protonated ultrathin C3N4 nanosheets as an S-scheme photocatalyst with tunable oxygen vacancies for boosting CO2 conversion,Chemical Engineering Journal,2021, 133867 
  • [4]HaijiaoLu,Yi-MingZhao,Sandra ElizabethSaji,XinmaoYin,AryWibowo,Chi SinTang,ShiboXi,PengfeiCao,MikeTebyetekerwa,BoruiLiu,
  • MarcHeggen,Rafal E.Dunin-Borkowski,AntonioTricoli,Andrew T.S.Wee,Hieu T.Nguyen,Qing-BoYan,ZongyouYin,All room-temperature synthesis, N2 photofixation and reactivation over 2D cobalt oxides,Applied Catalysis B: Environmental,2022, 121001
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